symbol v ds v gs i dm t j , t stg symbol typ max 30 40 61 75 r q jl 4.5 6 absolute maximum ratings t a =25c unless otherwise noted 5.6 pulsed drain current b 30 12 gate-source voltage drain-source voltage a 55 continuous drain current a maximum units parameter t a =25c t a =70c i d 7.2 v junction and storage temperature range c -55 to 150 t a =70c 1.0 power dissipation a t a =25c w p dsm 1.6 maximum junction-to-ambient a steady-state c/w t 10s r q ja c/w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a AON5802B common-drain dual n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 7.2a (v gs = 4.5v) r ds(on) < 19 m w (v gs = 4.5v) r ds(on) < 20 m w (v gs = 4.0v) r ds(on) < 23 m w (v gs = 3.1v) r ds(on) < 30 m w (v gs = 2.5v) esd protected general description the AON5802B/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain configuration. AON5802B and AON5802Bl are electrically identical. - rohs compliant -AON5802Bl is halogen free top view bottom view d1/d2 dfn 2x5 g1 s1 s1 g2 s2 s2 g1 s1 s1 g2 s2 s2 g1 d1 1 s1 rg g2 d2 1 s2 rg alpha & omega semiconductor, ltd. www.aosmd.com
AON5802B symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.6 1.1 1.5 v i d(on) 55 a 12 15.5 19 t j =125c 19 23.5 29 v gs =4.0v, i d =5a 13 16 20 v gs =3.1v, i d =5a 14 18 23 17 23 30 g fs 32 s v sd 0.71 0.9 v i s 2.5 a c iss 920 1150 pf c oss 105 pf c rss 52 pf r g 1.7 2.5 k q g (10v) 17.5 24 nc q g (4.5v) 7.5 10 nc q gs 2.9 nc q gd 2.5 nc t d(on) 320 420 ns t r 550 ns t d(off) 4.35 s t f 2.4 s t rr 21.6 26 ns q rr 10 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =7a, di/dt=100a/ m s turn-on rise time turn-off delaytime body diode reverse recovery time i f =7a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, r l =2.1 w , r gen =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =7a m w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time gate source charge gate drain charge total gate charge switching parameters i s =1a,v gs =0v v ds =5v, i d =7a v gs =2.5v, i d =4a r ds(on) static drain-source on-resistance forward transconductance v gs =4.5v, i d =7a diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =30v, v gs =0v drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v gate-source breakdown voltage v ds =0v, i g =250ua v ds =0v, v gs =10v zero gate voltage drain current gate-body leakage current a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specifi c board design. the current rating is based on the steady state thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev5: july2011 alpha & omega semiconductor, ltd. www.aosmd.com
AON5802B typical electrical and thermal characteristics 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) v gs =2.5v v gs =4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =7a v gs =2.5v i d =4a 0 10 20 30 40 50 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v i d =7a 25c 125c 0 10 20 30 40 50 0 1 2 3 4 5 vds (volts) fig 1: on-region characteristics i d (a) 3v 4.5v 2.5v v gs =2v 3.5v alpha & omega semiconductor, ltd. www.aosmd.com
AON5802B typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 1e-04 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- case (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss v ds =15v i d =7a single pulse d=t on /t t j,pk =t c +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1s 10s alpha & omega semiconductor, ltd. www.aosmd.com
AON5802B - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com
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